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提示信息| 特性：125 | 用途：太阳能电池片 | 种类：单晶硅片 |
| 加工定制：是 |
编号
NO.
| 项目
| 规格
| 单位
UNITS
|
ITEMS
| SPECIFICATIONS
| ||
1
| 拉制方式 | CZ
|
|
Growing Method
| |||
1
| 拉制方式
| CZ
|
|
Growing Method
| |||
2
| 材 料
| 单晶硅
|
|
Material
| Monocrystalline Silicon
| ||
3
| 导电类型&掺杂剂
| P/B or P/Ga
| mm
|
Type & Dopant
| |||
4
| 硅片尺寸
| 125*125±0.5 见附图1 See Figure 1
| mm
|
Wafer Size
| |||
5
| 直径
| 150±0.5
| mm
|
Diameter
| |||
6
| 垂直度
| 90±0.3
| °
|
Perpendicularity
| |||
7
| 厚 度
| 200±20
| μm
|
Thickness
| |||
8
| 总厚度变化
| ≤ 30
| μm
|
TTV
| |||
9
| 电阻率
| A: 0.5 ≤ ρ < 3 B: 3 ≤ ρ < 6
| Ω·cm
|
Resistivity
| |||
10
| 少子寿命
| ≥ 10
| μs
|
Minority Carrier Life
| |||
11
| 晶向
| ＜100＞ ±2.0
| °
|
Orientation
| |||
12
| 位错密度
| ≤ 3000
| pcs/cm2
|
Dislocation Density
| |||
13
| 氧含量
| ≤ 1*1018 (ASTM F121-83)
| atoms/cm3
|
Oxygen Content
| |||
14
| 碳含量
| ≤ 5*1016 (ASTM F123-83)
| atoms/cm3
|
Carbon Content
| |||
15
| 崩边
| 深度Depth ≤ 0.3mm,长度Length ≤ 0.5mm
|
|
Edge Defect
| (最多2处) (Max 2 pieces)
| ||
16
| 沾污
| 无
|
|
Contamination Area
| None
| ||
17
| 线痕
| ≤ 20
| μm
|
Saw Mark
| |||
18
| 翘曲度
| ≤ 50
| μm
|
Warpage
|
硅片型号
Wafer Type
| 尺寸(mm)
| |||||||
Dimension
| ||||||||
A | B | C | D | |||||
Max
| Min
| Max
| Min
| Max
| Min
| Max
| Min
| |
125 I
| 125.5
| 124.5
| 150.5
| 149.5
| 84
| 82
| 31
| 29
|
125 II
| 125.5
| 124.5
| 165.5
| 164.5
| 109
| 107
| 13
| 11
|
